Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-06-21
2011-06-21
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S440000, C257S444000
Reexamination Certificate
active
07964926
ABSTRACT:
An image sensor package includes an image sensor chip, a handling substrate mounted on a front side of the image sensor chip and a through electrode disposed on a backside of the image sensor chip. The through electrode extends into the image sensor chip. Moreover, the image sensor chip includes a semiconductor substrate having a pixel region and a peripheral circuit region, a photoelectric transformation section disposed in the semiconductor substrate of the pixel region and a dielectric layer disposed on a front surface of the semiconductor substrate. The dielectric layer has a step region so that a top surface of the dielectric layer in the pixel region is lower than that of the dielectric layer in the peripheral circuit region. The image sensor chip further includes a conductive pad disposed on the dielectric layer in the peripheral circuit region and is electrically connected to the through electrode.
REFERENCES:
patent: 7808064 (2010-10-01), Kawasaki et al.
patent: 7875948 (2011-01-01), Hynecek et al.
patent: 2009/0224347 (2009-09-01), Kim et al.
patent: 2000-031441 (2000-01-01), None
patent: 2000-150846 (2000-05-01), None
F. Chau & Associates LLC
Nguyen Cuong Q
Samsung Electronics Co,. Ltd.
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