Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Charge transfer device
Reexamination Certificate
2007-05-01
2010-06-01
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Charge transfer device
C257S240000
Reexamination Certificate
active
07727821
ABSTRACT:
An image sensing device can include one or more image sensing cells. Each image sensing cell can have a charge store element formed from a semiconductor material doped to a first conductivity type. The charge store element can be in contact with a channel region formed from a semiconductor material doped to a second conductivity type. The charge store element can have one or more surfaces for exposure to an image source. Each image sensing cell can also include a charge electrode formed from a semiconductor material doped to the first conductivity type that is separated from the charge store element by a semiconductor material doped to the second conductivity type. In addition, one or more current detection electrodes can be included in each image sensing cell. A current detection electrode can pass a current flowing through the channel region in a read operation. Such an image sensing cell can be compact in size and/or have a large image sensing area.
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Haverstock & Owens LLP
Lee Calvin
SuVolta, Inc.
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