Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-03
2009-02-24
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257S431000
Reexamination Certificate
active
07495271
ABSTRACT:
In a solid-state image-sensing device, when image sensing is performed, in each pixel, MOS transistors T1and T5are turned on and a MOS transistor T6is turned off so that a MOS transistor T2operates in a subthreshold region. When resetting is preformed, in each pixel, the MOS transistors T1and T5are turned off and the MOS transistor T6is turned on so that the gate voltage of the MOS transistor T2is kept constant. In this state, the MOS transistor T2is brought first into a conducting state and then, by turning a signal φVPS to a high level, into a cut-off state. This permits a signal proportional to the threshold value of the MOS transistor T2to be output as compensation data.
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Hagihara Yoshio
Takada Kenji
Minolta Co. , Ltd.
Potter Roy K
Sidley Austin LLP
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