Image-sensing apparatus

Details Image-sensing apparatus Image-sensing apparatus

2007-09-18

2007-09-18

Potter, Roy Karl (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S290000

Reexamination Certificate

active

11198807

ABSTRACT:
In a solid-state image-sensing device, when image sensing is performed, in each pixel, MOS transistors T1and T5are turned on and a MOS transistor T6is turned off so that a MOS transistor T2operates in a subthreshold region. When resetting is preformed, in each pixel, the MOS transistors T1and T5are turned off and the MOS transistor T6is turned on so that the gate voltage of the MOS transistor T2is kept constant. In this state, the MOS transistor T2is brought first into a conducting state and then, by turning a signal φVPS to a high level, into a cut-off state. This permits a signal proportional to the threshold value of the MOS transistor T2to be output as compensation data.

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