Image reversal method for repairing defective areas on microelec

Details Image reversal method for repairing defective areas on microelec Image reversal method for repairing defective areas on microelec

1994-04-28

1995-10-17

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430311, 430324, 430329, 2504923, G03C 500

Patent

active

054590132

ABSTRACT:
A defective area on a microelectronic substrate is repaired using an image reversal photoresist and image reversal process. The defective area on a microelectronic substrate is identified and a layer of image reversal photoresist is applied to the microelectronic substrate. The image reversal photoresist is then exposed twice in an image reversal process, and the image reversal photoresist is then removed over the defective area. A repair material is then blanket deposited, and the image reversal photoresist is removed in a lift-off operation such that the material on the defective area remains. Missing lines and broken lines may be repaired. Conductive and dielectric materials may be repaired.

REFERENCES:
patent: 4751169 (1988-06-01), Behringer
patent: 5145714 (1992-09-01), Reisman et al.
patent: 5182230 (1993-01-01), Donelon et al.
Silicon Processing For The VLSI Era, vol. 1: Process Technology, Wolf et al., Lattice Press, 1986, pp. 421-423.
Image Reversal: A Practical Approach to Lift-Off, Jones et al., SPIE vol. 771 Advances in Resist Technology and Processing IV (1987), pp. 231-241.
Process Factors in Ammonia Catalyzed Image Reversal, Semiconductor International, May 1988, pp. 200-204.
Image Reversal and Lift-Off: A Versatile Combination for ULSI Processing, Jones et al., Proc. Eighth International Tech. Conference on Photopolymer, Oct. 1988 (SPE).

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