Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-12-09
1993-03-23
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 2502081, H01L 0000
Patent
active
051967219
ABSTRACT:
An image reading device comprises a number of photoelectric conversion elements arrayed in the main scan direction so as to generate charges corresponding to optical density information of each extremely small area of an image on an original, and thin film transistors respectively connected in series with those photoelectric conversion elements, conduction of each thin film transistors being controlled by a preset voltage applied to the gate electrode thereof, and additional capacitor portions that are located closer to the photoelectric conversion elements with respect to the thin film transistors. The charges generated in the photoelectric conversion elements are stored in the stray capacitors of the photoelectric conversion elements, the overlap capacitors of the thin film transistors, and the additional capacitor portion.
REFERENCES:
patent: 4931661 (1990-06-01), Fukaya et al.
Abe Tsutomu
Miyake Hiroyuki
Fuji 'Xerox Co., Ltd.
Jackson, Jr. Jerome
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