Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-08
2010-02-16
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000
Reexamination Certificate
active
07663168
ABSTRACT:
In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.
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Hidekazu Takahashi et al. “A 3.9μm Pixel Pitch VGA Format 10b Digital Image Sensor With 1.5-Transistor/Pixel”, ISSCC 2004/Session 6/Imaging/6.1, 2004 IEEE International Solid State Circuits Conference, pp. 108-109; 78.
Mitsuyoshi Mori et al. “A 1/4in 2M Pixel CMOS Image Sensor With 1.75Transistor/Pixel”, ISSCC 2004/Session 6/Imaging/6.2, 2004 IEEE International Solid State Circuits Conference, pp. 110-111; 80.
Endo Yasuyuki
Hara Kunihiko
Kimura Masatoshi
Kubo Hiroshi
Buchanan & Ingersoll & Rooney PC
Nguyen Thinh T
Renesas Technology Corp.
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