Image pickup element performing image detection of high...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S232000, C257S233000, C257S292000

Reexamination Certificate

active

11081950

ABSTRACT:
In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.

REFERENCES:
patent: 5786588 (1998-07-01), Takahashi
patent: 6188094 (2001-02-01), Kochi et al.
patent: 2001-024948 (2001-01-01), None
patent: 2002-050752 (2002-02-01), None
Hidekazu Takahashi et al. “A 3.9μm Pixel Pitch VGA Format 10b Digital Image Sensor With 1.5-Transistor/Pixel”, ISSCC 2004/Session 6/imaging/6.1, 2004 IEEE International Solid State Circuits Conference, pp. 108-109; 78.
Mitsuyoshi Mori et al. “A ¼in 2M Pixel CMOS Image Sensor With 1.75 Transistor/Pixel”, ISSCC 2004/Session 6/Imaging/6.2, 2004 IEEE International Solid State Circuits Conference, pp. 110-111; 80.

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