Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-11
2011-01-11
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257S293000, C257SE27133
Reexamination Certificate
active
07868365
ABSTRACT:
In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.
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Notice of Grounds of Rejection issued in corresponding Japanese Application No. JP 2009-048210 dated Sep. 1, 2009, and an English Translation thereof.
Endo Yasuyuki
Hara Kunihiko
Kimura Masatoshi
Kubo Hiroshi
Buchanan & Ingersoll & Rooney PC
Nguyen Thinh T
Renesas Electronics Corporation
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