Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-07
2009-10-20
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257SE27133
Reexamination Certificate
active
07605415
ABSTRACT:
The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoelectric conversion unit and a transfer unit for transferring the signal charge from the photoelectric conversion unit to the amplifying unit, in which the photoelectric conversion unit is formed of a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region and a second-conductivity-type third semiconductor region is formed on at least a part of the gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel, a first-conductivity-type fourth semiconductor region having an impurity concentration higher than that of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region and a first-conductivity-type fifth semiconductor region formed at a position deeper than the fourth semiconductor region and having an impurity concentration higher than that of the first semiconductor region is included between the photoelectric conversion unit and the third semiconductor region.
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Koizumi Toru
Ogura Masanori
Sakai Seiichiro
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Karimy Mohammad T
Pham Thanh V
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