Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-01-31
2009-10-20
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257SE31001, C257SE33001
Reexamination Certificate
active
07605404
ABSTRACT:
An image pickup device includes a sensor substrate having image sensors arranged in its image pickup region in the form of a matrix. An interlayer insulating film layer is formed below a bottom of the sensor substrate. The interlayer insulating film layer includes wiring layers to construct an electric circuit. The wiring layer is electrically connected with the image sensors. A support substrate is attached on a bottom of the interlayer insulating film layer. The support substrate has contact electrodes formed in via holes. A lens layer is formed over the top surface of the sensor substrate to be opposite to the interlayer insulating film layer. A light-transmitting member is formed over the lens layer.
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Choi Min Seog
Jung Kyu Dong
Kim Woon Bae
Lee Seung Wan
Samsung Electronics Co,. Ltd.
Soward Ida M
Sughrue & Mion, PLLC
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