Image pickup device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S292000, C257S293000, C257SE27133

Reexamination Certificate

active

07943975

ABSTRACT:
A solid-state imaging device includes a plurality of pixels, each pixel including a photoelectric conversion unit, an amplifying transistor, and a reset transistor. The photoelectric conversion unit is arranged in a well of a first conductivity type on a semiconductor substrate. A source or drain region of the amplifying transistor or the reset transistor is arranged between the photoelectric conversion unit of a first pixel and the photoelectric conversion unit of a second pixel adjacent to the first pixel. In the first pixel, a first semiconductor region of an impurity concentration higher than that of the well of the first conductivity type is arranged between the source or drain region and the photoelectric conversion unit, and a second semiconductor region of the first conductivity type is arranged under the first semiconductor region.

REFERENCES:
patent: 6211509 (2001-04-01), Inoue et al.
patent: 6252286 (2001-06-01), Arai
patent: 6403998 (2002-06-01), Inoue
patent: 6433374 (2002-08-01), Fukunaga et al.
patent: 6690423 (2004-02-01), Nakamura et al.
patent: 2003/0137594 (2003-07-01), Koizumi et al.
patent: 2003/0160295 (2003-08-01), Okita
patent: 2006/0027843 (2006-02-01), Ogura
patent: 2006/0043393 (2006-03-01), Okita
patent: 2006/0043439 (2006-03-01), Koizumi
patent: 2006/0043440 (2006-03-01), Hiyama
patent: 2006/0044434 (2006-03-01), Okita
patent: 2006/0044439 (2006-03-01), Hiyama
patent: 10-308507 (1998-11-01), None
patent: 11-274450 (1999-10-01), None
patent: 11-284168 (1999-10-01), None
patent: 2003-134400 (2003-05-01), None

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