Image device and photodiode structure

Details Image device and photodiode structure Image device and photodiode structure

2006-09-05

2006-09-05

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S301000, C257S302000, C257S304000, C257S905000, C257S296000, C438S243000, C438S248000, C438S249000, C438S258000, C438S448000

Reexamination Certificate

active

07102184

ABSTRACT:
The invention provides a photodiode with an increased charge collection area, laterally spaced from an adjacent isolation region. Dopant ions of a first conductivity type with a first impurity concentration form a region surrounding at least part of the isolation region. These dopant ions are further surrounded by dopant ions of the first conductivity type with a second impurity concentration. The resulting isolation region structure increases the capacitance of the photodiode by allowing the photodiode to possess a greater charge collection region while suppressing the generation of dark current.

REFERENCES:
patent: 5898196 (1999-04-01), Hook et al.
patent: 6069058 (2000-05-01), Hong
patent: 6417074 (2002-07-01), Kopley et al.
patent: 6483163 (2002-11-01), Isogai et al.
patent: 6794698 (2004-09-01), Perng et al.

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