Illumination optimization for specific mask patterns

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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Details

C716S030000, C716S030000, C250S492220, C250S492230, C430S005000, C430S311000, C430S312000, C430S313000, C359S350000

Reexamination Certificate

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06871337

ABSTRACT:
A method and apparatus for microlithography. The method and apparatus include optimizing illumination modes based on characteristics of a specific mask pattern. The illumination is optimized by determining an appropriate illumination mode based on diffraction orders of the reticle, and the autocorrelation of the projection optic. By elimination of parts of the illumination pattern which have no influence on modulation, excess DC light can be reduced, thereby improving depth of focus. Optimization of mask patterns includes addition of sub-resolution features to reduce pitches and discretize the probability density function of the space width.

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