Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-16
2009-06-09
Le, Thao X (Department: 4136)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S529000, C257S760000, C257SE23149, C257SE29300, C257SE21409, C438S132000, C438S257000
Reexamination Certificate
active
07544992
ABSTRACT:
An illuminating efficiency-increasable and light-erasable embedded memory structure including a substrate, a memory device, many dielectric layers, many cap layers and at least three metal layers is described. The substrate includes a memory region and a core circuit region. The memory device includes a select gate and a floating gate, and the select gate and the floating gate are disposed adjacently on the substrate in the memory region. The dielectric layers are disposed on the substrate and cover the memory device. The dielectric layers have a first opening located above the floating gate. Each of the cap layers is disposed on each of the dielectric layers, respectively. The metal layers are disposed in the dielectric layers in the core circuit region.
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Huang Yu-Hua
Shih Hung-Lin
Tsai Wen-Ching
J.C. Patents
Le Thao X
Nguyen Duy T
United Microelectronics Corp.
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