Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate
2007-08-07
2007-08-07
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Group iii-v compound
C257S613000, C257SE21097, C438S478000, C438S479000
Reexamination Certificate
active
10953354
ABSTRACT:
A III-V group nitride system semiconductor self-standing substrate has III-V group nitride system semiconductor single crystal with a hexagonal crystal system crystalline structure. The substrate is provided with a polished surface at every position of which crystal orientation perpendicular to the substrate surface is inclined 0.09 degrees or more from the C-axis direction of the substrate.
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Andujar Leonardo
Hitachi Cable Ltd.
McGinn IP Law Group PLLC
Quinto Kevin
LandOfFree
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