Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Patent
1994-11-28
1995-12-05
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
257 18, 257200, 372 48, H01L 2906, H01L 2915
Patent
active
054731747
ABSTRACT:
A buffer layer of a III-V compound semiconductor device grown by depositing III-V compound semiconductor layers on a silicon semiconductor substrate 21 has minimum stress and no dislocation propagation. Periodic recesses are formed on a surface of the silicon semiconductor substrate 21 and a Ga layer 41 and an As layer 61 are formed on opposite side surfaces of each recess, respectively. A GaAs strain superlattice layer 22 thus formed is used as the buffer layer. Dislocation is confined to the buffer layer which can be made thin. Stress and consequent warpage are reduced by the recesses.
REFERENCES:
patent: 4872046 (1989-10-01), Morkoc et al.
patent: 5206877 (1993-04-01), Kahen
patent: 5285086 (1994-02-01), Fitzgerald
Lo et al, Appl. Phys. Lett. 52 (17), 25 Apr. 1988 pp. 1386-1388.
Lin et al, Appl. Phys. Lett. (51) (11) 14 Sep. 1987 pp. 814-816 "Growth in porous silicon".
Jackson Jerome
NEC Corporation
LandOfFree
III-V compound semiconductor device formed on silicon substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with III-V compound semiconductor device formed on silicon substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and III-V compound semiconductor device formed on silicon substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1375674