III-V Compound semi-conductor crystal growth from a liquid phase

Details III-V Compound semi-conductor crystal growth from a liquid phase III-V Compound semi-conductor crystal growth from a liquid phase

1975-06-25

1976-09-21

Emery, Stephen J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG70, 156DIG61, 148172, 118415, 423 87, 423122, B01J 1720, C01B 1900, C01B 2700, C01F 700

Patent

active

039817644

ABSTRACT:
In an epitaxial growth method in liquid phase for III-V compound semiconductor crystals a solution for crystal growth is at first heated to a temperature which is higher than the temperature of crystal growth, and then cooled to that temperature, whereby a part of the solution crystallizes out as small crystals. This solution is separated by means of a filter means into two parts, one of which contains the small crystals and the other of which does not. A substrate crystal is brought into contact with the latter.

REFERENCES:
patent: 3551219 (1970-12-01), Parrish
patent: 3677228 (1972-06-01), Parrish
patent: 3690965 (1972-09-01), Bergh
patent: 3762367 (1973-10-01), Nishizawa
patent: 3767481 (1973-10-01), Ettenberg
patent: 3792682 (1974-02-01), Phipps
patent: 3896765 (1975-07-01), Ariga
Blum et al., IBM Tech. Disclosure Bulle., vol. 13, No. 11, Apr., 1971, p. 3221.
DeGelormo, IBM Tech. Discl. Bulle., vol. 16, No. 7, Dec., 1973, p. 2158.

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