(III) Plane gallium arsenide IMPATT diode

Details (III) Plane gallium arsenide IMPATT diode (III) Plane gallium arsenide IMPATT diode

1978-06-16

1980-10-14

Larkins, William D.

357 13, 357 61, H01L 2904, H01L 2920, H01L 2990

Patent

active

042284538

ABSTRACT:
In an avalanche diode of gallium arsenide, e.g. an IMPATT diode, the optimization of the coefficient of ionization by impact in the case of impacts initiated by holes when the electrical field propels the carriers along the axis of 1 1 1 of the monocrystal, has been utilized. The structure comprises a substrate of Ga As with two large faces perpendicular to the axis 1 1 1 and layers obtained by epitaxial growth from one of these large faces. Arrangements are made to ensure that the electrical field is as parallel as possible to this crystalline axis. The improvement in efficiency is of the order of 20%.

REFERENCES:
patent: 3457473 (1969-07-01), Okada et al.
Kobayashi et al., Fujitsu Sci. & Tech. J., vol. 12, No. 3, Sep., 1976, pp. 107-119.
Omori et al., 1973, Conf. on Electron Device Techniques, N.Y. (May 1-2, 1973), pp. 17-20.
Sze, Physics of Semiconductor Devices, (Wiley, N.Y.), 1969, pp. 59-60.

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