III nitride single crystal and method of manufacturing...

Details III nitride single crystal and method of manufacturing... III nitride single crystal and method of manufacturing...

2011-08-30

2011-08-30

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from liquid combined with subsequent diverse...

Reexamination Certificate

active

08008173

ABSTRACT:
A III nitride single-crystal manufacturing method in which a liquid layer (3) of 200 μm or less thickness is formed in between a substrate (1) and a III nitride source-material baseplate (2), and III nitride single crystal (4) is grown onto the face (1s) on the liquid-layer side of the substrate (1). Herein, the substrate (1) in at least a superficial layer (1a) on the liquid-layer side may be formed of a III nitride single crystal, while the III nitride source-material baseplate (2) can be formed of a III nitride polycrystal. Further, the substrate (1) in at least a superficial layer (1a) on the liquid-layer side, and the III nitride source-material baseplate (2) can be formed of a III nitride single crystal, while the face (1s) on the liquid-layer side of the substrate (1) can be made a III-atom surface, and the face (2s) on the liquid-layer side of the III nitride source-material baseplate (2) can be made a nitrogen-atom surface.

REFERENCES:
patent: 6328796 (2001-12-01), Kub et al.
patent: 1017113 (2000-07-01), None
patent: 1754811 (2007-02-01), None

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