III-nitride semiconductor fabrication

Details III-nitride semiconductor fabrication III-nitride semiconductor fabrication

2008-07-15

2008-07-15

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S602000, C438S046000, C257S077000, C257S011000, C257S078000, C257S189000, C257SE21097, C257SE21098, C257SE21112, C257SE21113, C257SE21121, C257SE21126, C257SE21127, C257SE21138

Reexamination Certificate

active

11537304

ABSTRACT:
A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes.

REFERENCES:
patent: 6316793 (2001-11-01), Sheppard et al.
patent: 6720586 (2004-04-01), Kidoguchi et al.
patent: 7247889 (2007-07-01), Hanson et al.
patent: 2002/0182839 (2002-12-01), Ogawa et al.
patent: 2005/0173728 (2005-08-01), Saxler
patent: 2007/0023761 (2007-02-01), Robbins
patent: 2007/0141823 (2007-06-01), Preble et al.
International Search Report dated Mar. 25, 2008 issued in PCT Application No. PCT/US06/38678.

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