III-nitride light emitting diode

Details III-nitride light emitting diode III-nitride light emitting diode

2005-02-22

2005-02-22

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

With metal contact alloyed to elemental semiconductor type...

C257S103000, C257S613000, C257S615000, C257S079000, C257S099000

Reexamination Certificate

active

06858866

ABSTRACT:
The present invention, a III-nitride light emitting diode (LED) and a manufacture method thereof, forms a magnetic metal layer in a conventional III-nitride LED by the method of thermal evaporation, e-beam evaporation, ion sputtering, or electroplate. Due to the eddy current effect, heat is generated by using electromagnetic oven inducing with electromagnetic wave to activate the p-type semiconductor material in III-nitride LED. The present invention has advantages of providing the equipments of simple structure and low cost. The contact resistance between the semiconductors and electrodes is reduced while the III-nitride compound semiconductor material is activated.

REFERENCES:
patent: 6023076 (2000-02-01), Shibata
patent: 6376866 (2002-04-01), Shakuda
patent: 6459100 (2002-10-01), Doverspike et al.
patent: 6492191 (2002-12-01), Shibata et al.
patent: 6657237 (2003-12-01), Kwak et al.
patent: 20020074561 (2002-06-01), Sawaki et al.

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