Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-02-15
2005-02-15
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S476000
Reexamination Certificate
active
06855584
ABSTRACT:
After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.
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Miyairi Hidekazu
Nakajima Setsuo
Yamazaki Shunpei
Booth Richard A.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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