III-nitride light-emitting devices with improved...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

Reexamination Certificate

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C257S079000, C257S103000, C257S190000, C257S615000, C257S627000, C257S094000, C257S021000, C257S014000

Reexamination Certificate

active

06943381

ABSTRACT:
A light-emitting semiconductor device comprises a III-Nitride active region and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier confinement layer, for example. In another aspect of the invention, a light-emitting semiconductor device comprises a III-Nitride light emitting layer, an InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1), and a spacer layer interposing the light emitting layer and the InxAlyGa1-x-yN layer. The spacer layer may advantageously space the InxAlyGa1-x-yN layer and any contaminants therein apart from the light emitting layer. The composition of the III-Nitride layer may be advantageously selected to determine a strength of an electric field in the III-Nitride layer and thereby increase the efficiency with which the device emits light.

REFERENCES:
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patent: 6576932 (2003-06-01), Khare et al.
patent: 2002/0058349 (2002-05-01), Khan et al.
Shen et al., Indium Gallium Nitride Separate Confinement Heterostructure Light Emitting Devices, May 8, 2003.
Jianping Zhang et al., “Enhanced luminescence in InGaN multiple quantum wells with quaternary AllnGaN barriers”, Applied Physics Letters, vol. 77, No. 17, Oct. 23, 2000, pp. 2668-2670.
M.E. Aumer et al., “Strain-induced piezoelectric field effects on light emission energy and intensity from AllnGaN/InGaN quantum wells”, Applied Physics Letters, vol. 79, No. 23, Dec. 3, 2001, pp. 3803-3805.
J. Zhang et al., “Pulsed atomic layer epitaxy of quaternary AllnGaN layers”, Applied Physics Letters, vol. 70, No. 7, Aug. 13, 2001, pp. 925-927.
Changqing Chen et al., Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AllnGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission, Jpn. J. Appl. Phys., vol. 41, (2002), Part 1, No. 4A, Apr. 2002, pp. 1924-1928.

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