Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2006-12-22
2009-06-16
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S013000, C257S189000, C257S615000, C257SE21085, C438S048000
Reexamination Certificate
active
07547908
ABSTRACT:
In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulkcorresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-planecorresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
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International Search Report and Written Opinion, 22 pages.
Gardner Nathan F.
Goetz Werner K.
Grillot Patrick N.
Romano Linda T.
Pert Evan
Philips Lumilieds Lighting Co, LLC
Wilson Scott R
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