Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-01-18
2005-01-18
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S012000, C257S013000, C257S037000, C257S038000, C257S039000, C257S098000
Reexamination Certificate
active
06844571
ABSTRACT:
The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.
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Kish, Jr. Fred A.
Krames Michael R
Rajkomar Pradeep
Steigerwald Daniel A.
Tan Tun S
Lumileds Lighting U.S. LLC
Patent Law Group LLP
Soward Ida M.
Zarabian Amir
LandOfFree
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