III-nitride device and method with variable epitaxial growth...

Details III-nitride device and method with variable epitaxial growth... III-nitride device and method with variable epitaxial growth...

2007-08-22

2009-02-17

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S604000, C257SE21097, C257SE21108, C257SE21112, C257SE21133

Reexamination Certificate

active

07491627

ABSTRACT:
A semiconductor device composed of III-nitride materials is produced with epitaxial growth that permits vertical and lateral growth geometries to improve device characteristics. The resulting device has a greater breakdown voltage due to the greater integrity of the semiconductor material structure since no ion implantation processes are used. The epitaxially grown layers also exhibit greater thermal conductivity for improved operation with power semiconductor devices. The device may include a laterally grown charge compensated area to form a superjunction device. The resulting device may be bidirectional and have improved breakdown voltage in addition to higher current capacity for a given voltage rating.

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