Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate
2011-08-16
2011-08-16
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
C257S103000, C257S013000, C257S079000, C257S918000, C257SE51018, C257SE51022, C257SE33001, C257SE25028, C257SE25032, C257S080000, C257S081000, C257S086000
Reexamination Certificate
active
07999270
ABSTRACT:
The present invention discloses a III-nitride compound semiconductor light emitting device having an n-type nitride compound semiconductor layer, an active layer grown on the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole, and a p-type nitride compound semiconductor layer grown on the active layer. The III-nitride compound semiconductor light emitting device includes a plurality of semiconductor layers including a nitride compound semiconductor layer with a pinhole structure grown on the p-type nitride compound semiconductor layer.
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Park Eun Hyun
Yoo Tae-Kyung
Armand Marc
Epivalley Co., Ltd.
Fahmy Wael M
Harness & Dickey & Pierce P.L.C.
Lee Kisuk
LandOfFree
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