Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2005-04-05
2005-04-05
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S020000, C438S022000, C438S040000, C438S043000, C438S478000, C438S606000, C257S010000, C257S013000, C257S079000, C257S292000, C257S293000, C257S918000
Reexamination Certificate
active
06875629
ABSTRACT:
A separator layer of Ti is formed on an auxiliary substrate of sapphire or the like. An undercoat layer of TiN is formed on the separator layer. The undercoat layer is provided so that a Group III nitride compound semiconductor layer can be grown with good crystallinity on the undercoat layer. TiN is sprayed on the undercoat layer to form a thermal spray depositing layer. Then, the separator layer is chemically etched to reveal the undercoat layer. Then, a Group III nitride compound semiconductor layer is grown on a surface of the undercoat layer.
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Chiyo Toshiaki
Ito Jun
Senda Masanobu
Shibata Naoki
Lee, Jr. Granvill D.
McGinn & Gibb PLLC
Smith Matthew
Toyoda Gosei Co,., Ltd.
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