Amplifiers – With semiconductor amplifying device – Including current mirror amplifier
Patent
1993-12-14
1995-01-31
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including current mirror amplifier
330253, 330257, 323316, H03F 316, H03F 345
Patent
active
053862007
ABSTRACT:
A current minor amplifier (CMA) includes first, second, third and fourth field effect transistors (FETs), all of the same conductivity type. The first and second FETs are in nested cascode connection in the CMA input stage, and the third and fourth FETs are in nested cascode connection in the CMA output stage. The drains of the second and fourth FETs respectively connect to the CMA input terminal and to the CMA output terminal, and the sources of the first and third FETs connect to the CMA common terminal. The potential at the CMA input terminal is applied to an interconnection of the gate electrodes of the first, second, third and fourth FETs to regulate current conduction through their channels, thereby to implement CMA operation. Structural differences between the first and second FETs cause the first FET source-to-gate voltage to exceed the second FET source-to-gate voltage in response to serial conduction of current through their respective channels; and similar structural differences between the third and fourth FETs cause the third FET source-to-gate voltage to exceed the fourth FET source-to-gate voltage in response to serial conduction of current through their respective channels. These structural differences can involve different dopings of the semiconductor regions in which the serially connected FET channels in each nested-cascode connection are respectively induced, or differences in the width-to-length ratios of the serially connected FET channels in each nested-cascode connection, or both such differences.
REFERENCES:
patent: 4371844 (1983-02-01), Boeke
patent: 4893090 (1990-01-01), Boudewijns
Mullins James B.
Samsung Electronics Co,. Ltd.
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