Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2005-07-05
2005-07-05
Baumeister, B. William (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
Reexamination Certificate
active
06914270
ABSTRACT:
The IGBT (insulated gate bipolar transistor) has a weakly doped drift zone of a first conductivity formed in a weakly doped semiconductor substrate of the same conductivity. A highly doped first well zone of the first conductivity and a highly doped second well zone of a second conductivity are arranged between the drift zone and the semiconductor substrate.
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Disney et al.: “SOI LIGBT Devices with a Dual P-Well Implant for Improved Latching Characteristics” 5thInternational Symposium on Power Semiconductor Devices and ICs, 1993 IEEE, pp. 254-258.
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Baumeister B. William
Farahani Dana
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
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