IGBT having one or more stacked zones formed within a second...

Details IGBT having one or more stacked zones formed within a second... IGBT having one or more stacked zones formed within a second...

2011-03-29

2011-03-29

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S337000, C257S341000, C257S378000, C257SE29066, C257SE29197

Reexamination Certificate

active

07915675

ABSTRACT:
An IGBT includes a first region, a second region located within the first region, a first contact coupled to the first region, a first layer arranged below the first region, a gate overlying at least a portion of the first region between the second region and the first layer and a second layer formed under the first layer. One or more stacked zones are formed within the second layer. Each one or more stacked zones includes a first zone and a second zone that overlies the first zone. Each first zone is inversely doped with respect to the second layer and each second zone is inversely doped with respect to the first zone. The IGBT further includes a third layer formed under the second layer and a second contact coupled to the third layer.

REFERENCES:
patent: 5757081 (1998-05-01), Chang et al.
patent: 6163040 (2000-12-01), Akiyama et al.
patent: 6228719 (2001-05-01), Frisina et al.
patent: 7317225 (2008-01-01), Saito et al.
patent: 7355257 (2008-04-01), Kishimoto et al.
patent: 7462909 (2008-12-01), Saito et al.
patent: 7595536 (2009-09-01), Terashima

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