IGBT cathode design with improved safe operating area...

Details IGBT cathode design with improved safe operating area... IGBT cathode design with improved safe operating area...

2004-11-16

2008-11-04

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S565000, C257S592000

Reexamination Certificate

active

07446376

ABSTRACT:
In an insulated gate bipolar transistor, an improved safe operating area capability is achieved according to the invention by a two-fold base region comprising a first base region (81), which is disposed in the channel region (7) so that it encompasses the one or more source regions (6), but does not adjoin the second main surface underneath the gate oxide layer (41), and a second base region (82) is disposed in the semiconductor substrate (2) underneath the base contact area (821) so that it partially overlaps with the channel region (7) and with the first base region (81).

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