IC wiring connecting method using focused energy beams

Details IC wiring connecting method using focused energy beams IC wiring connecting method using focused energy beams

1995-11-21

1998-10-20

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438940, 438961, 438618, H10L 2144

Patent

active

058245987

ABSTRACT:
An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

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Miyauchi, et al., "Maskless Ion Beam Writing of Precise Doping Patterns with Be and Si for Molecular Beam Epitaxially Grown Multilayer GaAs", J. Vac. Sci. Technol. B4(1), Jan./Feb. 1986, pp. 189-193.
Mitsuhashi, et al. "Use of Electron Beam Tester in LSI Failure Analysis", SSD 83-152, pp. 67-72.
"Forming a Carbon Thin Film by Focused Ion Beam CVD", 14p-T-15, of briefs of the 45th meeting of the Japan applied physics society held in Autumn 1984.

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