IC wiring connecting method and apparatus

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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Details

257773, 257774, 257698, B21C 2700, H01L 2348, H01L 2946

Patent

active

054970342

ABSTRACT:
An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

REFERENCES:
patent: 3597834 (1971-08-01), Lathrop
patent: 3846166 (1974-11-01), Saiki et al.
patent: 4503329 (1985-03-01), Yamaguchi et al.
patent: 4609809 (1986-09-01), Yamaguchi et al.
patent: 4868068 (1989-09-01), Yamaguchi et al.
Allied et al., "Spectrally Selective Surface by Chemical Vapor Deposition" Solar Energy Materials 1985 pp. 87-129.
Cacouris et al., "Laser Direct Writing of Metal Interconnects" IEDM Conference 1985 pp. 594-596.

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