IC processed piezoelectric microphone

Details IC processed piezoelectric microphone IC processed piezoelectric microphone

1988-08-19

1989-03-28

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

29594, C23C 1434, H04R 3100

Patent

active

048161250

ABSTRACT:
A miniature diaphragm pressure transducer. A thin diaphragm of silicon nitride has an upper face covered by a zinc-oxide piezoelectric film encapsulated in chemical vapor deposited silicon dioxide. A series of annular, basically conentric, polysilicon electrodes are provided in the silicon dioxide between the piezoelectric film and the diaphragm and in contact with the piezoelectric film. A series of annular, basically concentric, aluminum electrodes are on the opposite side of the piezoelectric film from the polysilicon electrodes and are aligned with the polysilicon electrodes; they lie over the silicon dioxide, and are in contact with the piezoelectric film.

REFERENCES:
J. R. Sank, J. Andio Eng. Soc., vol. 28, No. 6, Jun. 1980, pp. 433-436.

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