Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-12-17
1999-11-30
Dang, Thi
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438633, 216 88, H01L 21304
Patent
active
059942240
ABSTRACT:
The present invention relates to integrated circuits (ICs) fabrication. Particularly, there is a cmp process which incorporates small quantities of two chemicals. The first chemical is the standard slurry mixtures, like water, aluminum-oxide and hydrogen-peroxide mixed into a slurry. The second chemical is a strong base chemical, like KOH, or potassium hydroxide. Moreover, the cmp process utilizes a system of closely regulating the timing of the two chemical process. Specifically, during a first time period, both chemicals are applied; thus increasing speed of the chemical removal of tungsten material. During a second time period, the KOH is removed, thus slowing down the chemical action and importantly achieving a greater degree of planerization than is capable by the two chemical first time period.
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Application Of Chemical Mechanical Polishing To The Fabrication Of VLSI Circuit Interconnections-J. Electrochem Soc., vol. 138, No. 6, Jun. 1991.
Doan Trung T.
Elliott Richard L.
Larsen Jody D.
Sandhu Gurtej S.
Dang Thi
Fields Walter D.
Micro)n Technology, Inc.
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