Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1999-05-12
2000-03-21
Dang, Thi
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438693, H01L 21304
Patent
active
060402458
ABSTRACT:
The present invention relates to integrated circuits (ICs) fabrication. Particularly, there is a CMP process which incorporates small quantities of two chemicals. The first chemical is the standard slurry mixtures, like water, aluminum-oxide and hydrogen-peroxide mixed into a slurry. The second chemical is a strong base chemical, like KOH, or potassium hydroxide. Moreover, the CMP process utilizes a system of closely regulating the timing of the two chemical processes. Specifically, during a first time period, both chemicals are applied; thus providing a given speed of the chemical removal of tungsten material. During a second time period, the KOH is removed, so as to slow down the chemical action and facilitate a greater degree of planarization.
REFERENCES:
patent: 4968381 (1990-11-01), Prigge et al.
Doan Trung T.
Elliott Richard L.
Larsen Jody D.
Sandhu Gurtej S.
Dang Thi
Fields Walter D.
Micro)n Technology, Inc.
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