IC for oscillator having electrostatic breakdown preventive...

Details IC for oscillator having electrostatic breakdown preventive... IC for oscillator having electrostatic breakdown preventive...

2005-03-29

2005-03-29

Kinkead, Arnold (Department: 2817)

Oscillators

Solid state active element oscillator

Transistors

C331S167000, C331S1170FE, C331S10800D

Reexamination Certificate

active

06873217

ABSTRACT:
There are provided an internal oscillation transistor; a terminal that is connected to the base of the oscillation transistor and to which an external resonance circuit is to be connected; and two internal diodes provided between the terminal and the ground, for preventing electrostatic breakdown of the oscillation transistor. The cathodes of the two diodes are connected to each other and supplied with a reverse-bias voltage. The anode of one diode is grounded and the anode of the other diode is connected to the terminal by a first resistor. An internal second resistor for DC-grounding the terminal is also provided.

REFERENCES:
patent: 4731592 (1988-03-01), Sato et al.
patent: 5265716 (1993-11-01), Sawada et al.
patent: 6147564 (2000-11-01), Nakamiya et al.
patent: 0 846 989 (1998-06-01), None
patent: 11-88053 (1999-03-01), None
English language abstract of Japanese patent reference No. 11088053. Patent Abstracts of Japan published by Japanese Patent Office. It is believed that the abstract was published on Mar. 30, 1999.

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