Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-12-08
1985-10-15
Saba, William G.
Metal working
Method of mechanical manufacture
Assembling or joining
29576E, 29578, 148175, 148187, 148DIG85, 148DIG87, 148DIG151, 357 44, 357 46, 357 52, 357 92, H01L 2172, H01L 2182
Patent
active
045465398
ABSTRACT:
An integrated circuit wherein the base and surface collector regions of the I.sup.2 L vertical transistor are formed by the same steps used to form the collector and base, respectively, of complementary bipolar transistors. Thus, a high voltage bipolar transistor of the same type as the vertical I.sup.2 L transistor may be formed using separate process steps, thereby optimizing the design of both devices.
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Tokumaru et al., "I.sup.2 L with Self-Aligned Double-Diffused Injector" IEEE J. Solid-State Circuits, vol. SC-12, No. 2, (Apr. 1977), pp. 109-114.
Harris Corporation
Saba William G.
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