Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-31
2010-10-05
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S356000, C257S360000, C361S111000
Reexamination Certificate
active
07808047
ABSTRACT:
A trigger circuit is provided for a pull-down device by connecting a diode between the I/O pad and the body of the pull-down device. In one embodiment, the pull-down device is formed as a plurality of discrete transistors in a single well. The drain of each transistor is connected through a ballast resistor to the I/O pad; and the source of each transistor is connected through a ballast resistor to ground. The trigger circuit is a diode formed in a different well from that of the transistors. The cathode of the diode is connected to the I/O pad and the anode is connected to the transistor well through a center tap located between the transistors. Preferably, the transistors are NMOS transistors formed in a P-well. Advantageously, the diode is an N+/PLDD diode. Alternatively, the diode is an N+/P diode where the P region is formed by an ESD implant. In other embodiments the diode is formed in the same well as the transistors. In these embodiments, either an N+/PLDD diode or an implanted diode is formed in place of one of the transistors.
REFERENCES:
patent: 5594265 (1997-01-01), Shimizu et al.
Gallerano Antonio
Huang Cheng-Hsiung
Shih Chih-Ching
Watt Jeffrey T.
Altera Corporation
Patton Paul E
Smith Zandra
Ward & Olivo
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