I.I.L. with region connecting base of double diffused injector t

Details I.I.L. with region connecting base of double diffused injector t I.I.L. with region connecting base of double diffused injector t

1975-12-24

1977-10-18

Larkins, William D.

357 35, 357 36, 357 44, 357 50, 357 89, H01L 2972, H01L 2704, H03K 1908

Patent

active

040549003

ABSTRACT:
An integrated injection logic semiconductor device which comprises an N type semiconductor substrate; a P type semiconductor layer superposed on the N type semiconductor substrate; a first N type region formed in the P type semiconductor layer; a second N type region formed in the P type semiconductor layer; and a P type region formed in the first N type region, wherein the first N type region is connected to the N type semiconductor substrate through an N type connector region formed between the first N type region and N type semiconductor substrate.

REFERENCES:
patent: 3736477 (1973-05-01), Berger et al.
patent: 3947865 (1976-03-01), Russell
patent: 3982266 (1976-09-01), Matzen et al.

Affiliated with

Also associated with

Rating

I.I.L. with region connecting base of double diffused injector t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with I.I.L. with region connecting base of double diffused injector t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and I.I.L. with region connecting base of double diffused injector t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1450257