Hypercontacting

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S604000

Reexamination Certificate

active

10349831

ABSTRACT:
The invention, called hypercontacting, achieves a very high level of activated doping at an exposed surface region of a compound semiconductor. This enables production of low resistance ohmic contacts by creating a heavily doped region near the contact. Such region lowers the contact's tunneling barrier by decreasing the extent of the depletion region at the contact, thereby reducing resistance.

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patent: 2001/0015437 (2001-08-01), Ishii et al.
patent: 2003/0121468 (2003-07-01), Boone et al.
patent: 2003/0129820 (2003-07-01), Walukiewicz et al.

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