Hydrothermal process for growing optical-quality single crystals

Details Hydrothermal process for growing optical-quality single crystals Hydrothermal process for growing optical-quality single crystals

1992-02-28

1993-11-23

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156621, 156622, 156624, 156DIG71, 156DIG73, C30B 912

Patent

active

052640736

ABSTRACT:
A hydrothermal process is disclosed for growing a crystal at MTiOXO.sub.4 wherein M is NH.sub.4, K, Rb and/or Tl or mixtures thereof with Cs and X is P and/or As, at elevated temperatures using a mineralizer comprising both M.sup.+1 and X.sup.+5 and an amount of F.sup.- effective to increase the solubility of MTiOXO.sub.4 in the mineralizer. Mineralizers containing F.sup.-1, M.sup.+1 and X.sup.+5 are disclosed wherein F.sup.-1 is present in an amount effective to increase the solubility of MTiOXO.sub.4 in the mineralizer and to provide a MTiOXO.sub.4 solubility of at least about 1% by weight at the operating temperature and pressure for the hydrothermal production.

REFERENCES:
patent: 3949323 (1976-04-01), Bierlein et al.
patent: 4305778 (1981-12-01), Gier
patent: 4382840 (1983-05-01), Chai et al.
patent: 4654111 (1987-03-01), Laudise
patent: 4961819 (1990-10-01), Marnier
patent: 5066356 (1991-11-01), Ferretti et al.
Derwent Abstract, No. 91-191105. (1991).
Ballman, A. A., et al., "Growth of Potassium Titanyl Phosphate (KTP) from Molten Tungsate Melts", J. Crystal Growth, 75 (1986) 390-394.
Belt, R. F., "Low-Temperature Hydrothermal Growth of KTiOP.sub.4 (KTP)", SPIE Proc. 968, 100 Aug. 1988.
Gashurov, G., et al., "Growth of KTP*", Tunable Solid State Lasers for Remote Sensing, Proceedings of NASA Conference, Stanford University, Stanford, USA, (Oct. 1-3, 1984), ED R. L. Byer, et al., Springer-Verlag, Berlin, Heidelberg, New York, Tokyo.
El Haidouri, A., "Correlation between Structure and Second Harmonic Generation in M.sup.I TiOAsO.sub.4 Compounds", Mat. Res. Bull., vol. 25, pp. 1193-1202, (Jan. 1990).
Jia S., et al., "The Solubility of KTiOPO.sub.4 (KTP) in KF Aqueous Solution under High Temperature and High Pressure", J. Crystal Growth 79 (1986) 970-973.
Jia S., et al., "Hydrothermal Growth of KTP Crystals in the Medium Range of Temperature and Pressure", J. Crystal Growth 99 (1990) 900-904.
Laudise, R. A., "7.3 Hydrothermal Growth", The Growth of Single Crystals, Prentice-Hall, Englewood Cliffs, (1970), pp. 275-293.
Laudise, R. A., et al. "Phase Relations, Solubility and Growth of Potassium Titanyl Phosphate, KTP", J. Crystal Growth 74 (1986) 275-280.
Laudise, R. A., et al., "Solubility and P-V-T Relations and the Growth of Potassium Titanyl Phosphate", J. Crystal Growth 102 (1990) 427-433.
Marnier, G. ,et al., "Ferroelectric Transition and Melting Temperatures of New Compounds: CsTiOAsO.sub.4 and Cs.sub.x M.sub.1-x TiOAs.sub.y P.sub.1-y O.sub.4 with M=K or Rb", J. Phys.:Condens.Matter 1 (Feb. 1989) 5509-5513.
Passaret, M., et al., "recrystallization of TiO.sub.2, GeO.sub.2, Si.sub.1-x Ge.sub.x O.sub.2 in Fluorined Hydrothermal Solutions", J. Cryst. Growth 13/14 (1972) 524-9.
Protas, P. J., "Structure Cristalline de CsTiO(AsO.sub.4)", Acta Cryst. (1989) C45, 1123-1125.
Belt, R. F., et al., "Nonlinear Optical Materials for Second Harmonic Generation (KTP); Phase I: Preparation of 5MM Cubes," Avionics Laboratory, Wright-Patterson Air Force Base, Ohio: May 1984 (94 pages).

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