Hydrogenated oxidized silicon carbon material

Details Hydrogenated oxidized silicon carbon material Hydrogenated oxidized silicon carbon material

1998-06-29

2000-11-14

Meeks, Timothy

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438781, 438789, 427577, 427579, 42724915, 42725537, 4272556, C23C 1632

Patent

active

061470090

ABSTRACT:
A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.

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Luther et al, Planar Copper-Polyimide Back End Of The Line Interconnections For ULSI Devices, Jun. 8-9 1993, VMIC Conference, 1993 ISMIC-102/93/0015, pp. 15-21, especially p. 16.

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