Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-05-01
2007-05-01
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21547
Reexamination Certificate
active
11082369
ABSTRACT:
Methods of filling gaps on semiconductor substrates with dielectric film are described. The methods reduce or eliminate sidewall deposition and top-hat formation. The methods also reduce or eliminate the need for etch steps during dielectric film deposition. The methods include treating a semiconductor substrate with a hydrogen plasma before depositing dielectric film on the substrate. In some embodiments, the hydrogen treatment is used is conjunction with a high rate deposition process.
REFERENCES:
patent: 4361461 (1982-11-01), Chang
patent: 5129958 (1992-07-01), Nagashima et al.
patent: 5227191 (1993-07-01), Nagashima
patent: 5246885 (1993-09-01), Braren et al.
patent: 5252178 (1993-10-01), Moslehi
patent: 5270264 (1993-12-01), Andideh et al.
patent: 5282925 (1994-02-01), Jeng et al.
patent: 5342801 (1994-08-01), Perry et al.
patent: 5385857 (1995-01-01), Solo de Zaldivar
patent: 5494854 (1996-02-01), Jain
patent: 5516729 (1996-05-01), Dawson et al.
patent: 5532516 (1996-07-01), Pasch et al.
patent: 5621241 (1997-04-01), Jain
patent: 5622894 (1997-04-01), Jang et al.
patent: 5636320 (1997-06-01), Yu et al.
patent: 5641545 (1997-06-01), Sandhu
patent: 5702982 (1997-12-01), Lee et al.
patent: 5705419 (1998-01-01), Perry et al.
patent: 5711998 (1998-01-01), Shufflebotham
patent: 5789818 (1998-08-01), Havemann
patent: 5834068 (1998-11-01), Chern et al.
patent: 5851344 (1998-12-01), Xu et al.
patent: 5858876 (1999-01-01), Chew
patent: 5869902 (1999-02-01), Lee et al.
patent: 5872058 (1999-02-01), Van Cleemput et al.
patent: 5897370 (1999-04-01), Joshi et al.
patent: 5910020 (1999-06-01), Yamada
patent: 5911113 (1999-06-01), Yao et al.
patent: 5913140 (1999-06-01), Roche et al.
patent: 5920792 (1999-07-01), Lin
patent: 5937323 (1999-08-01), Orczyk et al.
patent: 5953635 (1999-09-01), Andideh
patent: 5962923 (1999-10-01), Xu et al.
patent: 5963840 (1999-10-01), Xia et al.
patent: 5968610 (1999-10-01), Liu et al.
patent: 5972192 (1999-10-01), Dubin et al.
patent: 6027663 (2000-02-01), Martin et al.
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6077451 (2000-06-01), Takenaka et al.
patent: 6077574 (2000-06-01), Usami
patent: 6106678 (2000-08-01), Shufflebotham et al.
patent: 6124211 (2000-09-01), Butterbaugh et al.
patent: 6136703 (2000-10-01), Vaartstra
patent: 6149779 (2000-11-01), Van Cleemput
patent: 6184158 (2001-02-01), Shufflebotham et al.
patent: 6200412 (2001-03-01), Kilgore et al.
patent: 6211065 (2001-04-01), Xi et al.
patent: 6232196 (2001-05-01), Raaijmakers et al.
patent: 6265269 (2001-07-01), Chen et al.
patent: 6277764 (2001-08-01), Shin et al.
patent: 6331494 (2001-12-01), Olson et al.
patent: 6335261 (2002-01-01), Natzle et al.
patent: 6395150 (2002-05-01), Van Cleemput et al.
patent: 6400023 (2002-06-01), Huang
patent: 6410446 (2002-06-01), Tsai et al.
patent: 6451705 (2002-09-01), Trapp et al.
patent: 6479361 (2002-11-01), Park
patent: 6479396 (2002-11-01), Xu et al.
patent: 6486081 (2002-11-01), Ishikawa et al.
patent: 6500728 (2002-12-01), Wang
patent: 6531377 (2003-03-01), Knorr et al.
patent: 6566229 (2003-05-01), Hong et al.
patent: 6569777 (2003-05-01), Hsu et al.
patent: 6596653 (2003-07-01), Tan et al.
patent: 6596654 (2003-07-01), Bayman et al.
patent: 6599829 (2003-07-01), Smith et al.
patent: 6617207 (2003-09-01), Kiryu et al.
patent: 6642105 (2003-11-01), Kim et al.
patent: 6706541 (2004-03-01), Toprac et al.
patent: 6737334 (2004-05-01), Ho et al.
patent: 6787483 (2004-09-01), Bayman et al.
patent: 6794290 (2004-09-01), Papasouliotis et al.
patent: 6808748 (2004-10-01), Kapoor et al.
patent: 6812043 (2004-11-01), Bao et al.
patent: 6821905 (2004-11-01), Pan et al.
patent: 6846391 (2005-01-01), Papasouliotis et al.
patent: 6846745 (2005-01-01), Papasouliotis et al.
patent: 6867086 (2005-03-01), Chen et al.
patent: 6903031 (2005-06-01), Karim et al.
patent: 6958112 (2005-10-01), Karim et al.
patent: 7001854 (2006-02-01), Papasouliotis et al.
patent: 2001/0019903 (2001-09-01), Shufflebotham et al.
patent: 2001/0044203 (2001-11-01), Huang et al.
patent: 2002/0052119 (2002-05-01), Van Cleemput
patent: 2002/0084257 (2002-07-01), Bjorkman et al.
patent: 2002/0179570 (2002-12-01), Mathad et al.
patent: 2003/0003244 (2003-01-01), Rossman
patent: 2003/0003682 (2003-01-01), Moll et al.
patent: 2003/0087506 (2003-05-01), Kirchhoff
patent: 2003/0165632 (2003-09-01), Lin et al.
patent: 2003/0203652 (2003-10-01), Bao et al.
patent: 2003/0207580 (2003-11-01), Li et al.
patent: 2004/0020894 (2004-02-01), Williams et al.
patent: 2004/0058549 (2004-03-01), Ho et al.
patent: 2004/0082181 (2004-04-01), Doan et al.
patent: 2004/0110390 (2004-06-01), Takagi et al.
patent: 2004/0241342 (2004-12-01), Karim et al.
patent: 2005/0074946 (2005-04-01), Chu et al.
patent: 2005/0130411 (2005-06-01), Bao et al.
patent: 2005/0136576 (2005-06-01), Ishihara et al.
patent: 2005/0136686 (2005-06-01), Kim et al.
patent: 2005/0250346 (2005-11-01), Schmitt
patent: 2003-031649 (2003-01-01), None
U.S. Office Action mailed Nov. 17, 2005, from U.S. Appl. No. 10/316,987.
Lang et al., “Strain Engineering—HDP Thin Film With Tensile Stress For FEOL and Other Applications”, Novellus Systems, Inc., filed Nov. 17, 2004, U.S. Appl. No. 10/991,890, pp. 1-35.
U.S. Office Action mailed Oct. 18, 2005, from U.S. Appl. No. 10/947,424.
Lang et al., “Using Water (H2O) To Replace Oxygen (O2) In A Silicon Dioxide (SiO2) Thin Film Deposition Process for HDP STI Technology”, Novellus Systems, Inc., filed Nov. 9, 2005, U.S. Appl. No. 11/272,487, pp. 1-25.
U.S. Office Action mailed Aug. 6, 2003, from U.S. Appl. No. 10/058,897.
U.S. Office Action mailed Jan. 29, 2004, from U.S. Appl. No. 10/058,897.
U.S. Office Action mailed May 21, 2004, from U.S. Appl. No. 10/058,897.
U.S. Office Action mailed Aug. 10, 2004, from U.S. Appl. No. 10/271,333.
U.S. Office Action mailed Apr. 14, 2004, from U.S. Appl. No. 10/271,333.
U.S. Office Action mailed Jun. 29, 2005, from U.S. Appl. No. 10/728,569.
Papasouliotis et al., “Hydrogen-Based Phosphosilicate Glass Process for Gap Fill of High Aspect Ratio Structures”, Novellus Systems, Inc., filed Oct. 11, 2002, Appl. No. 10/271,333, pp. 1-28.
Guari et al., “Method of Preventing Structures Erosion During Multi-Step Gap Fill”, Novellus Systems, Inc., filed Dec. 4, 2003, Appl. No. 10/728,569, pp. 1-29.
U.S. Office Action mailed Jan. 7, 2005, from U.S. Appl. No. 10/728,569.
U.S. Office Action mailed Nov. 6, 2002, from U.S. Appl. No. 09/996,619.
U.S. Office Action mailed Mar. 2, 2004, from U.S. Appl. No. 10/442,846.
Bayman et al., “Gap Fill For High Aspect Ratio Structures”, Novellus Systems, Inc., filed Jul. 13, 2004, Appl. No. 10/890,655, pp. 1-24.
U.S. Office Action mailed Jul. 25, 2005, from U.S. Appl. No. 10/890,655.
U.S. Office Action mailed Apr. 30, 2004, from U.S. Appl. No. 10/389,164.
Sutanto et al., “Method For Controlling Etch Process Repeatability”, Novellus Systems, Inc., filed Sep. 2, 2003, Appl. No. 10/654,113, pp. 1-31.
U.S. Office Action mailed Jun. 17, 2004, from U.S. Appl. No. 10/654,113.
U.S. Office Action mailed Dec. 2, 2004, from U.S. Appl. No. 10/654,113.
U.S. Office Action mailed Mar. 31, 2005, from U.S. Appl. No. 10/654,113.
Bayman et al., “Process Modulation to Prevent Structure Erosion During Gap Fill”, Novellus Systems, Inc., filed Sep. 7, 2004, Appl. No. 10/935,909, pp. 1-30.
Papasouliotis et al., “Dynamic Modification of Gap-Fill Process Characteristics”, Novellus Systems, Inc., filed Sep. 21, 2004, Appl. No. 10/947,434, pp. 1-25.
Hook et al., “The Effects of Fluorine on Parametrics and Reliability in a 0.18-μm 3.5/6.8nm Dual Gate Oxide CMOS Technology”, IEEE Transactions on Electron Devices, vol. 48, No. 7., Jul. 2001, pp. 1346-1353.
Papasoulitotis et al., “Deposition Profile Modification Through Process Chemistry”, Novellus Systems, Inc., filed Dec. 9, 2002, Appl. No. 10/316,987, pp. 1-35.
U.S. Office Action mailed Jan. 27, 2005, from U.S. Appl. No. 10/316,987.
U.S. Office Action mailed Jul. 14, 2
Cox Sean
Huang Judy H.
Lang Chi-I
Nguyen Minh Anh
Shanker Sunil
Beyer Weaver LLP.
Novellus Systems Inc.
Sarkar Asok Kumar
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