Hydrogen plasma photoresist strip and polymeric residue...

Details Hydrogen plasma photoresist strip and polymeric residue... Hydrogen plasma photoresist strip and polymeric residue...

2007-02-20

2007-02-20

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S738000, C257SE21252, C257SE21255, C257SE21256

Reexamination Certificate

active

11140771

ABSTRACT:
A method (100) of fabricating an electronic device (200) formed on a semiconductor wafer. The method forms a layer (215) of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. The method also forms a photoresist layer in (216) a fixed position relative to the layer of the first material. The method also forms at least one void (220) through the layer of the first material in response to the photoresist layer. Further, the method subjects (106) the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer.

REFERENCES:
patent: 6281135 (2001-08-01), Han et al.
patent: 6379574 (2002-04-01), Ou-Yang et al.
patent: 6426304 (2002-07-01), Chien et al.
patent: 6652709 (2003-11-01), Suzuki et al.
patent: 6962879 (2005-11-01), Zhu et al.

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