Hydrogen plasma photoresist strip and polymeric residue...

Details Hydrogen plasma photoresist strip and polymeric residue... Hydrogen plasma photoresist strip and polymeric residue...

2005-11-22

2005-11-22

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S738000, C438S745000

Reexamination Certificate

active

06967173

ABSTRACT:
A method (100) of fabricating an electronic device (200) formed on a semiconductor wafer. The method forms a layer (215) of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. The method also forms a photoresist layer in (216) a fixed position relative to the layer of the first material. The method also forms at least one void (220) through the layer of the first material in response to the photoresist layer. Further, the method subjects (106) the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer.

REFERENCES:
patent: 6281135 (2001-08-01), Han et al.
patent: 6426304 (2002-07-01), Chien et al.
patent: 6440864 (2002-08-01), Kropewnicki et al.
patent: 6562726 (2003-05-01), Torek et al.
patent: 6613681 (2003-09-01), Hillyer et al.
patent: 6667244 (2003-12-01), Cox et al.

Affiliated with

Also associated with

Rating

Hydrogen plasma photoresist strip and polymeric residue... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hydrogen plasma photoresist strip and polymeric residue..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hydrogen plasma photoresist strip and polymeric residue... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3457821