Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-02-14
2006-02-14
Nguyen, Ha Tran (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S685000, C438S653000, C438S798000, C438S396000
Reexamination Certificate
active
06998275
ABSTRACT:
The present invention is directed to a method of forming a diffusion barrier layer for a FeRAM capacitor, which includes depositing a chemical vapor deposited titanium nitride layer in a via, and treating the chemical vapor deposited titanium nitride layer using a plasma treatment substantially excluding hydrogen.
REFERENCES:
patent: 6211035 (2001-04-01), Moise et al.
patent: 6261967 (2001-07-01), Athavale et al.
patent: 6284654 (2001-09-01), Roeder et al.
patent: 6316797 (2001-11-01), Van Buskirk et al.
patent: 6320213 (2001-11-01), Kirlin et al.
patent: 6709991 (2004-03-01), Kawahara et al.
patent: 2001/0034106 (2001-10-01), Moise et al.
patent: 2001/0044205 (2001-11-01), Gilbert et al.
patent: 2002/0021544 (2002-02-01), Cho et al.
“FeRAM Tutorial”, Ali Sheikholeslami and P. Glenn Gulak, A Survey of Circuit Innovations in Ferroelectric Random-Access Memories, Proceedings of the IEEE, vol. 88, No. 3, May, 2000, 3 pages, printed from the Internet at: htt://ww.eecg.toronto.edu/-ali/ferro/tutorial.html.
“A Survey of Circuit Innovations in Ferroelectric Random Access Memories”, Ali Sheikholeslami and P. Glenn Gulak, Proceedings of the IEEE, vol. 88, No. 5, May, 2000, pp. 667-689.
“Generic CVD Reactor”, CVD Basics, Daniel M. Dobkin, Dec. 7, 2001, 3 pages, printed from the Internet at: http://www.batnet.com/enigmatics/semiconductor—processing/CVD—Fundamentals/introduc . . . .
“Physical Vapor Deposition”, Cougar Labs, Inc., Dec. 7, 2001, 9 pages, printed from the Internet at: http://www.cougarlabs.com/pvd1.htmel.
“Hydrogen Passivation and Silicon Nitride Deposition Using an Integrated LPCVD Process”, Th. Pernau, M. Spiegel, G. Kragler, P. Fath and E. Bucher, 4 pages, printed from the Internet at: http://www.uni-konstanz.de/FuF/Physik/Bucher/pdf/VA1—42 Pernan—et—a.pdf.
Albrecht M. Grant
Chen Linlin
Jiang Qidu
Zhao Jin
Brady III W. James
Garner Jacqueline J.
Nguyen Ha Tran
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
LandOfFree
Hydrogen-less CVD TiN process for FeRAM VIA0 barrier... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hydrogen-less CVD TiN process for FeRAM VIA0 barrier..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hydrogen-less CVD TiN process for FeRAM VIA0 barrier... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3643112