Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1988-08-08
1990-10-02
Dees, Jose
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430325, 430326, 430327, 2504723, 156628, G03C 500
Patent
active
049606751
ABSTRACT:
Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.
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Cambria et al., "Mask and Circuit Repair with Focused-Ion Beams", Solid State Techn., 1987, pp. 133-136.
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Deb Satyen K.
Tsuo Y. Simon
Dees Jose
Midwest Research Institute
Richardson Ken
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